Effect of reticle erros on systematic lutrafield line width variations

Japanese Journal of Applied Physics

Volumn 34, Issue 12, 1995, Pages 6573-6577

  Liu, Hua Yu ^a   Yu, Crid ^b   Gleason, Bob ^a  

^a HEWLETT PACKARD COMPANY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

CD linearity; CD variation; I line lithography; Intrafield; Reticle; Sub micron lithography

Indexed keywords

ABERRATIONS; CORRELATION METHODS; ELECTRIC RESISTANCE MEASUREMENT; ERRORS; FILMS; IMAGING TECHNIQUES; MASKS;

CRITICAL DIMENSION LINEARITY; CRITICAL DIMENSION VARIATION; I-LINE LITHOGRAPHY; INTRAFIELD; POLYSILICON FILMS; RETICLE; SUBMICRON LITHOGRAPHY;

PHOTOLITHOGRAPHY;

EID: 0029489057     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.34.6573     Document Type: Article

References (4)

1. H.-Y. Liu, C. Yu and B. Gleason: Proc. SPIE 2440 (1995) 868.
2. F.-C. Lo, G. Dao, M. Berube, N. Tam, R. Hainsey, J. Farnsworth, J. Dewitt, R. LaVoy and S. Daugherty: Proc. SPIE 2254(1994) 2.
3. P.-Y. Yan, B. Hainsey, J. Farnsworth and J. Neff: Proc. SPIE2440 (1995) 270.
4. J. Iba, K. Hashimoto, R. A. Ferguson, T. Yangisawa and D. J.Samuels: to be published in Proc. SPIE Photomask Japan (1995).