Dynamic void formation in a DD-copper-structure with different metallization geometry

Microelectronics Reliability

Volumn 47, Issue 2-3, 2007, Pages 319-325

  Weide Zaage, Kirsten ^a   Dalleau, David ^a   Danto, Yves ^b   Fremont, Helene ^b  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b UNIVERSITÉ BORDEAUX 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; DEGRADATION; FINITE ELEMENT METHOD; METALLIZING; MOLECULAR STRUCTURE; SEMICONDUCTING DIAMONDS; STRESS ANALYSIS; THERMAL EFFECTS;

DUAL-DAMASCENE COPPER (DD-CU) METALLIZATIONS; DYNAMIC VOID FORMATION; FINITE ELEMENT MODELING; STRESS FREE TEMPERATURE;

COPPER;

EID: 33846591484     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.09.012     Document Type: Article

References (8)

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2. Fischer A, et al. Electromigration failure mechanism studies on copper interconnects. Proc. Interconn. Tec. Conf. p. 139.
3. Weide-Zaage K., Dalleau D., and Yu X. Static and dynamic analysis of failure locations and void formation in interconnects due to various migration mechanism. Mat Sci Semi Proc 6 (2003) 85-92
4. Dalleau D., Weide-Zaage K., and Danto Y. Simulation of time depending void formation in copper, aluminum and tungsten plugged via structures. Micro Reliab 43 (2003) 1821-1826
5. Touloukian Y.S. Thermophysical properties of matter vol. 1-2 (1970), Plenum Pub., Corb.
6. Properties of Silicon, INSPEC, The Institution of Electrical Engineers, London and New York, 1988.
7. Hau-Riege C.S., and Thompson C.V. The effects of microstructural transitions at width transitions on interconnect reliability. J Appl Phys 87 12 (2000) 8467-8472
8. Hu C.-K., et al. Mechanism for very long electromigration lifetime in dual-damascene Cu interconnects. Appl Phys Lett 78 7 (2001) 904