Use of anisotropic laser etching to the top n-GaN layer to alleviate current-crowding effect in vertical-structured GaN-based light-emitting diodes

Applied Physics Letters

Volumn 90, Issue 4, 2007, Pages

  Chen, Tron Min ^a   Wang, Shui Jinn ^a   Uang, Kai Ming ^b   Chen, Shiue Lung ^a   Tsai, Wei Chih ^a   Lee, Wei Chi ^a   Tsai, Ching Chung ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b WUFENG INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; EXCIMER LASERS; GALLIUM NITRIDE; LASER BEAM EFFECTS; LIGHT EMISSION; SURFACE TENSION;

ANISOTROPIC ETCHING; EPITAXY WAFERS; LASER ETCHING; LIGHT EMISSION UNIFORMITY; SURFACE LAYERS;

LIGHT EMITTING DIODES;

EID: 33846567167     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2432254     Document Type: Article

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