Quantitative measurements of memory effects in wideband RF power amplifiers driven by modulated signals

IEEE Microwave and Wireless Components Letters

Volumn 17, Issue 1, 2007, Pages 79-81

  Liu, Taijun ^a,b,c   Boumaiza, Slim ^a,c   Sesay, Abu B ^a,c   Ghannouchi, Fadhel M ^a,c  

^a IEEE   (Canada)

^b NINGBO UNIVERSITY   (China)

^c UNIVERSITY OF CALGARY   (Canada)

Author keywords

Adjacent channel power ration (ACPR); Memory effects; Power amplifiers (PAs)

Indexed keywords

ADJACENT CHANNEL POWER RATION (ACPR); ELECTRIC MEMORY EFFECTS; QUANTITATIVE MEASUREMENTS; WIDEBAND RF POWER AMPLIFIERS;

BROADBAND AMPLIFIERS; NATURAL FREQUENCIES; PHASE MODULATION; SIGNAL PROCESSING;

POWER AMPLIFIERS;

EID: 33846560623     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2006.887286     Document Type: Article

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