Flat-band potentials of GaN and InGaN/GaN QWs by bias-dependent photoluminescence in electrolyte solution

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 515-517

  Kobayashi, Naoki ^a   Morita, Ryusuke ^a   Narumi, Toru ^a   Yamamoto, Jun ^b   Ban, Yuzaburo ^b   Wakao, Kiyohide ^b  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

^b Nippon EMC LTD   (Japan)

Author keywords

A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B1. Nitrides

Indexed keywords

BAND STRUCTURE; ELECTROLYTES; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

CONDUCTION BAND; ELECTROLYTE SOLUTIONS; FLAT-BAND POTENTIALS; GENERATION POTENTIALS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33846449903     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.163     Document Type: Article

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