Selective-area MOVPE growth for 10 Gbit/s electroabsorption modulator integrated with a tunable DBR laser

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 672-675

  Kim, Sung Bock ^a   Sim, Jae Sik ^a   Kim, Ki Soo ^a   Sim, Eun Deok ^a   Ryu, Sang Wan ^b   Park, Hong Lee ^c  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Chonnam National University   (South Korea)

^c Yonsei University   (South Korea)

Author keywords

A3. Selective epitaxy; A3. Thin film epitaxy growth

Indexed keywords

BANDWIDTH; FIBER BRAGG GRATINGS; LASER MODES; LASERS; LIGHT MODULATION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; POWER GENERATION;

DISTRIBUTED BRAGG REFLECTOR (DBR) LASERS; ELECTROABSORPTION MODULATORS; SELECTIVE AREA GROWTH (SAG); SELECTIVE EPITAXY;

LIGHT MODULATORS;

EID: 33846430017     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.210     Document Type: Article

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