Performance comparison between integrated 40 Gb/s EAM devices grown by selective area growth and butt-joint overgrowth

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 576-581

  Zhu, J T ^a   Billia, L ^a   Bour, D ^a   Corzine, S ^a   Hofler G ^a  

^a Agitent Laboratories   (United States)

Author keywords

A3. Butt joint; A3. Metalorganic vapor phase epitaxy (MOVPE); A3. Selective area growth (SAG); Al. Optical low coherence reflectometer (OLCR); B3. 40 Gb s Electro absorption modulator (eam)

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CLADDING (COATING); EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; REFLECTION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; WAVEGUIDES; WAVELENGTH DIVISION MULTIPLEXING;

40 GB/S ELECTRO ABSORPTION MODULATOR (EAM); BUTT JOINT; OPTICAL LOW COHERENCE REFLECTOMETER (OLCR); SELECTIVE AREA GROWTH (SAG);

MODULATORS;

EID: 9944236725     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.09.009     Document Type: Conference Paper

References (6)

1. E. Ishimura, Y. Miyazaki, K. Matsumoto, T. Takiguchi, T. Itagaki, D. Suzuki, K. Takagi, H. Higuchi, IEE Conference Publication, No. 448/2, 1997, pp. 171-174.
2. Y. Miyazaki, H. Tada, T. Aoyagi, T. Nishimura, Y. Mitsui, IEEE J. Quantum Electron. 38 (2002) 1075.
3. M. Matsuda, K. Morito, K. Yamaji, Y. Satoh, O. Aoki, T. Fujii, Y. Kotaki, Proceedings ECIO '97. Eighth European Conference on Integrated Optics and Technical Exhibition, 1997, pp. 118.
4. S. Oshiba, Nakamura, H. Horikawa, IEEE J. Quantum Electron. 34 (1998) 277.
5. K. Kudo, K. Yashiki, T. Sasaki, Y. Yokoyama, K. Hamamoto, T. Morimoto, M. Yamaguchi, IEEE Photonics Technol. Lett. 12 (2000) 242.
6. H. Takeuchi, T. Saitoh, H, Ito, OFC Techn. Digest (2002) 336.