Investigation of Zn diffusion by SIMS and its effects on the performance of AlGaInP-based red lasers

Semiconductor Science and Technology

Volumn 21, Issue 1, 2006, Pages 35-39

  Shin, Young Chul ^a,b   Kim, Bum Jun ^a   Kang, Dong Hoon ^a   Kim, Young Min ^a   Kim, Tae Geun ^b  

^a Samsung Electro Mechanics   (South Korea)

^b Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM PHOSPHIDE; ZINC COMPOUNDS;

BARRIER LAYER; GROWTH TEMPERATURE; RED LASERS; RIDGE LASER;

QUANTUM WELL LASERS;

EID: 29244457286     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/1/006     Document Type: Article

References (11)

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