Low-temperature growth of ZnO nanorods in anodic aluminum oxide on Si substrate by atomic layer deposition

Applied Physics Letters

Volumn 90, Issue 3, 2007, Pages

  Yang, Ching Jung ^a   Wang, Shun Min ^a   Liang, Shih Wei ^a   Chang, Yung Huang ^a   Chen, Chih ^a   Shieh, Jia Min ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ANODES; CATALYSTS; ELECTRIC FIELDS; PHOTOLUMINESCENCE; ZINC OXIDE;

FIELD-EMISSION PROPERTIES; PHOTOLUMINESCENCE SPECTRUM; THRESHOLD ELECTRIC FIELDS;

NANOSTRUCTURED MATERIALS;

EID: 33846412920     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2431786     Document Type: Article

References (24)

1. Y. W. Heo, L. C. Tien, D. P. Norton, B. S. Kang, F. Ren, B. P. Gila, and S. J. Pearton, Appl. Phys. Lett. 85, 2002 (2004).
2. Q. Li, V. Kumar, Y. Li, H. Zhang, T. J. Marks, and R. P. H. Chang, Chem. Mater. 17, 1001 (2005).
3. H. Chik, J. Liang, S. G. Cloutier, N. Kouklin, and J. M. Xu, Appl. Phys. Lett. 84, 3376 (2004).
4. M. H. Huang, Y. Wu, H. Feick, N. Tran, E. Weber, and P. Yang, Adv. Mater. (Weinheim, Ger.) 13, 113 (2001).
5. Y.-K. Tseng, C.-J. Huang, H.-M. Cheng, I.-N. Lin, K.-S. Liu, and I.-C. Chen, Adv. Funct. Mater. 13, 811 (2003).
6. J. F. Conley, Jr., L. Stecker, and Y. Ono, Nanotechnology 16, 292 (2005).
7. M. S. Arnold, P. Avouris, Z. W. Pan, and Z. L. Wang, J. Phys. Chem. B 107, 659 (2003).
8. Z. L. Wang, J. Mater. Chem. 15, 1021 (2005).
9. Z. W. Pan, Z. R. Dai, and Z. L. Wang, Science 291, 1947 (2001).
10. Y. B. Li, Y. Bando, T. Sato, and K. Kurashima, Appl. Phys. Lett. 81, 144 (2002).
11. S. Liang, H. Sheng, Y. Liu, Z. Huo, Y. Lu, and H. Shen, J. Cryst. Growth 225, 110 (2001).
12. C. R. Gorla, N. W. Emanetoglu, S. Liang, W. E. Mayo, Y. Lu, M. Wraback, and H. Shen, J. Appl. Phys. 85, 2595 (1999).
13. S. C. Minne, S. R. Manalis, and C. F. Quates, Appl. Phys. Lett. 67, 3918 (1995).
14. R. F. Service, Mater. Sci. 276, 895 (1997).
15. M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, and P. Yang, Science 292, 1897 (2001).
16. M. Scharrer, X. Wu, A. Yamilov, H. Cao, and R. P. H. Chang, Appl. Phys. Lett. 86, 1511131 (2005).
17. H. Masuda and K. Fukuda, Science 268, 1466 (1995).
18. X.-P. Shen, A.-H. Yuan, Y.-M. Hu, Y. Jiang, Z. Xu, and Z. Hu, Nanotechnology 16, 2039 (2005).
19. S. Mahamuni, K. Borgohain, B. S. Bendre, V. J. Leppert, and S. H. Risbud, J. Appl. Phys. 85, 2861 (1999).
20. J. Q. Hu, X. L. Ma, Z. Y. Xie, N. B. Wong, C. S. Lee, and S. T. Lee, Chem. Phys. Lett. 344, 97 (2001).
21. A. van Dijken, E. A. Meulenkamp, D. Vanmaekelbergh, and A. Meijerink, J. Lumin. 90, 123 (2000).
22. S.-K. Kim, S.-Y. Jeong, and C.-R. Cho, Appl. Phys. Lett. 82, 562 (2003).
23. R. H. Fowler and L. W. Nordheim, Proc. R. Soc. London 119, 173 (1928).
24. Y. Zhang, K. Yu, S. Ouyang, and Z. Zhu, Mater. Lett. 60, 522 (2006).