MOVPE growth of zincblende magnesium sulphide

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 117-120

  Konczewicz, L ^a   Bigenwald, P ^a   Cloitre, T ^b   Chibane, M ^a   Ricou, R ^a   Testud, P ^a   Briot, O ^b   Aulombard, R L ^a,b  

^a UNIVERSITY OF AVIGNON   (France)

^b UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; CRYSTAL STRUCTURE; HYDROGEN SULFIDE; LATTICE CONSTANTS; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

BISMETHYLCYCLOPENTADIENYL MAGNESIUM; CLASSICAL HORIZONTAL REACTOR; ZINCBLENDE MAGNESIUM SULPHIDE;

EPITAXIAL GROWTH;

EID: 0030562360     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00832-2     Document Type: Article

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