Laser-interference lithography tailored for highly symmetrically arranged ZnO nanowire arrays

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Volumn 3, Issue 1, 2007, Pages 76-80

  Kim, Dong Sik ^a   Ji, Ran ^a   Fan, Hong Jin ^a   Bertram, Frank ^c   Scholz, Roland ^a   Dadgar, Armin ^c   Nielsch, Kornelius ^a   Krost, Alois ^c   Christen, Jürgen ^c   Gösele, Ulrich ^a   Zacharias, Margit ^a,b  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

Arrays; Chemical vapor transport; Lithography; Nanowires; Semiconductors

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EXCITONS; GALLIUM NITRIDE; LASERS; LITHOGRAPHY; NANOSTRUCTURED MATERIALS; OPTOELECTRONIC DEVICES; SEMICONDUCTOR MATERIALS;

BOUND-EXCITON EMISSIONS; CHEMICAL VAPOR TRANSPORT; LASER-INTERFERENCE LITHOGRAPHY (LIL); ZNO NANOWIRE ARRAYS;

ZINC OXIDE;

NANOTUBE; ZINC OXIDE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; LASER; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; LASERS; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; SEMICONDUCTORS; SURFACE PROPERTIES; ZINC OXIDE;

EID: 33846319779     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200600307     Document Type: Review

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