Electrical characteristics of Schottky diodes based on semi-insulating CdTe single crystals

Journal of Applied Physics

Volumn 101, Issue 1, 2007, Pages

  Kosyachenko, L A ^a   Maslyanchuk, O L ^a   Sklyarchuk, V M ^a   Grushko, E V ^a   Gnatyuk, V A ^b   Aoki, T ^b   Hatanaka, Y ^c  

^a CHERNIVTSI NATIONAL UNIVERSITY   (Ukraine)

^b SHIZUOKA UNIVERSITY   (Japan)

^c AICHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; EVAPORATION; LIGHT ABSORPTION; SINGLE CRYSTALS;

RECTIFICATION; SEMI-INSULATING MATERIALS; VACUUM EVAPORATION;

SCHOTTKY BARRIER DIODES;

EID: 33846299231     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2401283     Document Type: Article

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