Enhanced luminescence from InAs/GaAs quantum dots

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6401, Issue , 2006, Pages

  Holtz, P O ^a   Moskalenko, E S ^a,b   Larsson, M ^a   Karlsson, K F ^a   Schoenfeld, W V ^c   Petroff, P M ^c  

^a LINKÖPING UNIVERSITY   (Sweden)

^b IOFFE INSTITUTE   (Russian Federation)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITATION ENERGY; EXCITONIC FEATURES; LASER EXCITATION; PHOTOEXCITED CARRIERS;

ELECTRIC FIELDS; LASER TUNING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; TRANSPORT PROPERTIES;

LUMINESCENCE;

EID: 33846207484     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.689820     Document Type: Conference Paper

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