Origin of negative differential resistance in molecular junctions of Rose Bengal

Applied Physics Letters

Volumn 90, Issue 2, 2007, Pages

  Bandyopadhyay, Anirban ^a   Wakayama, Y ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIMERS; ELECTRIC FIELD EFFECTS; ELECTRONIC EQUIPMENT; HETEROJUNCTIONS; SCANNING TUNNELING MICROSCOPY;

ATOMIC SCALE JUNCTION; ISOLATED MOLECULES; NEGATIVE DIFFERENTIAL RESISTANCE (NDR);

ELECTRIC RESISTANCE;

EID: 33846207442     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2430767     Document Type: Article

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22. See EPAPS Document No. E-APPLAB-90-002702 for height profile at junctions, high resolution STM image of single RB, H bond, van-Der Waals role in junctions. This document can be reached via a direct link in the online article's HTML reference section or via the EPAPS homepage (http://www.aip.org/ pubservs/epaps/html).