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Applied Physics A: Materials Science and Processing

Volumn 86, Issue 3, 2007, Pages 289-292

Charge effects in silicon-doped heterofullerenes

(2) Matsubara, M a Massobrio, C b

a AALTO UNIVERSITY (Finland)

b INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED PARTICLES; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; MODIFICATION; MOLECULAR DYNAMICS; PROBABILITY DENSITY FUNCTION; SILICON;

CHARGE EFFECTS; HETEROFULLERENES; NEGATIVE CHARGE; SPIN DENSITY;

FULLERENES;

EID: 33846142489 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-006-3763-1 Document Type: Article

Times cited : (11)

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