First principles calculations of Si doped fullerenes: Structural and electronic localization properties in C59Si and C58Si2

Journal of Chemical Physics

Volumn 111, Issue 15, 1999, Pages 6787-6796

  Billas, I M L ^a   Massobrio, C ^b   Boero, M ^c   Parrinello, M ^a   Branz, W ^a   Tast, F ^a   Malinowski, N ^a   Heinebrodt, M ^a   Martin, T P ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG   (France)

^c JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000209660     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.480018     Document Type: Article

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