Numerical analysis of incident angle effects in reactive sputtering deposition of amorphous SiO2

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 10 B, 2006, Pages 8163-8167

  Taguchi, Masafumi ^a,b   Hamaguchi, Satoshi ^a  

^a OSAKA UNIVERSITY   (Japan)

^b NIPPON SHEET GLASS CO LTD   (Japan)

Author keywords

Deposition; Molecular dynamics; Monte Carlo method; SiO2; Sputtering

Indexed keywords

MOLECULAR DYNAMICS; MOLECULAR INTERACTIONS; MONTE CARLO METHODS; NUMERICAL METHODS; SPUTTER DEPOSITION;

DEPOSITED FILMS; INCIDENT ANGLE EFFECTS; MOLECULAR DYNAMICS (MD) SIMULATIONS; PHYSICAL MECHANISMS;

AMORPHOUS SILICON;

EID: 33846067488     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.8163     Document Type: Article

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