Impact of gate polysilicon interface on carrier trapping low frequency noise in advanced MOSFET's

Fluctuation and Noise Letters

Volumn 6, Issue 4, 2006, Pages

  Ghibaudo, G ^a   Jomaah, J ^a   Balestra, F ^a  

^a IMEP LAHC   (France)

Author keywords

LF noise; MOSFET; Polysilicon gate

Indexed keywords

EID: 33846059799     PISSN: 02194775     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0219477506003586     Document Type: Article

References (12)

1. A. McWhorter, 1/f noise and Germanium surface properties in Semiconductor Surf. Phys. (Univ. of Pennsylvania Press, Philadelphia, 1957), p. 207.
2. S. Christensson, I. Lundstrom and C. Svensson, Low-frequency noise in MOS transistors-I, Sol. State Elec. 11 (1968) 797.
3. G. Reimbold, Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion -Influence of interface states, IEEE Trans Electron Devices 31 (1984) 1190.
4. G. Ghibaudo, A simple derivation of Reimbold's drain current spectrum formula for flicker noise in MOSFETs, Solid Stat. Electronics 30 (1987) 1037.
5. D. Eggert, P. Huebler, A. Huerrich, H. Kuerck, W. Budde and M. Vorwerk, A SOI-RF-CMOS technology on high resistivity SIMOX substrates for microwave applications to 5 GHz, IEEE Trans, on Electron Devices 44 (1997) 1981.
6. C. Jakobson, I. Bloom, Y. Nemirovsky, 1/f noise in CMOS transistors for analog applications from subthreshold to saturation, Solid-State- Electronics 42 (1998) 1807.
7. G. Ghibaudo, O. Roux, Ch. Nguyen-Duc, F. Balestra and J. Brini, Improved Analysis of Low Frequency Noise in Field-Effect MOS Transistors, Phys. Stat. Sol. (a) 124 (1991) 571.
8. N. D. Arora, R. Rios, and C.-L. Huang, Modeling the polysilicon depletion effect and its impact on submicrometer CMOS circuit performance, IEEE Trans. Electron Devices 42 (1995) 935.
9. K. Hung, P. Ko, C. Hu and Y. Cheng, A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors, IEEE Trans Electron Devices 37 (1990) 654.
10. M. S. Krishnan, Y. C. Yeo, Q. Lu, T.-J. King, J. Bokor and C. Hu, Remote charge scattering in MOSFETs with ultra-thin gate dielectrics, IEDM Tech. Dig. 571-574 (1998).
11. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
12. P. Morfouli, G. Ghibaudo, T. Ouisse, E. Vogel, W. Hill, V., Misra, P. McLarty and J. J. Wortman, Low Frequency noise characterization of N and P MOSFET's with ultrathin oxynitride Gate films, IEEE Electron Device Letters 17 (1996) 395.