Modelling the formation of high aspect CdSe quantum wires: Axial-growth versus oriented-attachment mechanisms

Nanotechnology

Volumn 17, Issue 22, 2006, Pages 5707-5714

  Barnard, Amanda S ^a   Xu, Huifang ^b   Li, Xiaochun ^b   Pradhan, Narayan ^c   Peng, Xiaogang ^c  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b UNIVERSITY OF WISCONSIN MADISON   (United States)

^c UNIVERSITY OF ARKANSAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COALESCENCE; INTERFACIAL ENERGY; PASSIVATION; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SYNTHESIS (CHEMICAL);

AXIAL GROWTH; AXIAL ORIENTATION; METASTABLE SHAPES; NANOWIRES; SURFACE PASSIVATION;

SEMICONDUCTOR QUANTUM WIRES;

EID: 33846055436     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/22/029     Document Type: Article

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