Surface energy constraints for heteroepitaxial growth on compliant substrates: morphology of GaN grown on Sc layers

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 347-353

  Koleske, D D ^a   Wickenden, A E ^a   Freitas, J A ^a   Kaplan, R ^a   Prokes, S M ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); INTERFACIAL ENERGY; MORPHOLOGY; NITRIDES; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE; THERMODYNAMIC PROPERTIES;

GALLIUM NITRIDE; HETEROEPITAXIAL GROWTH;

EPITAXIAL GROWTH;

EID: 0030679051     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (29)