High-temperature diffusion barriers from Si-rich silicon-nitride

Surface and Interface Analysis

Volumn 38, Issue 12-13, 2006, Pages 1687-1691

  Bilger, G ^a   Voss, T ^a   Schlenker, T ^a   Strohm, A ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

Cu(In1 xGax)Se2 (CIGS); Diffusion barrier; Grain size; Si self diffusion in silicon nitride; Silicon nitride; SIMS; Solar cells

Indexed keywords

DIFFUSION; GERMANIUM; GOLD; GRAIN SIZE AND SHAPE; HIGH TEMPERATURE EFFECTS; IRON; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SILICON SOLAR CELLS; THIN FILMS;

CELL PERFORMANCE; CU(IN1-XGAX)SE2 (CIGS); DIFFUSION BARRIERS; DIFFUSION-BLOCKING EFFECTS;

SILICON NITRIDE;

EID: 33845929611     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.2396     Document Type: Conference Paper

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