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33845923347
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Sn-C = 2.14, Sn-N = 2.04, Sn-O = 1.94, Sn-Sn = 2.81, Sn-S = 2.43, Sn-P = 2.54 Å as reported in (a) Å as reported in (a) Mackay, K.M. The Chemistry of Organic Germanium, Tin and, Lead Compounds, S. Patai (ed), Wiley, Chichester, UK, 1995 Chap. 2, p. 101. and (b) Kennard, O. 1990 CRC Handbook of Chemistry and Physics, 71 st, D. R. Lide (ed.), CRC Press, Boca Raton, Section. 9-1
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Sn-C = 2.14, Sn-N = 2.04, Sn-O = 1.94, Sn-Sn = 2.81, Sn-S = 2.43, Sn-P = 2.54 Å as reported in (a) Mackay, K.M. 1995 The Chemistry of Organic Germanium, Å as reported in (a) Mackay, K.M. The Chemistry of Organic Germanium, Tin and, Lead Compounds, S. Patai (ed), Wiley, Chichester, UK, 1995 Chap. 2, p. 101. and (b) Kennard, O. 1990 CRC Handbook of Chemistry and Physics, 71 st, D. R. Lide (ed.), CRC Press, Boca Raton, Section. 9-1.
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0003426786
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Si-C 1.87 Å, Si-N 1.74 Å, Si-O 1.63 Å, Si-Si 2.34 Å, Si-P 2.264 Å, and Si-S 2.14 Å, as reported in (a) In The Chemistry of Organic Silicon Compounds, Vol. 2, Chap. 5., p. 181. Wiley, Chichester, UK, Rappoport, Z.; Apeloig, Y. (Eds.), and (b) Allen, F.H., Kennard, O., Watson, D.G., Brummer, L., Orpen, A.G. & Taylor, R. 1987 J. Chem. Soc., Perkin Trans. II. 1
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Si-C 1.87 Å, Si-N 1.74 Å, Si-O 1.63 Å, Si-Si 2.34 Å, Si-P 2.264 Å, and Si-S 2.14 Å, as reported in (a) Kaftory, M., Kapon, M. & Botoshansky, M. 1998 The Structural Chemistry of Organosilicon Compounds, In The Chemistry of Organic Silicon Compounds, Vol. 2, Chap. 5., p. 181. Wiley, Chichester, UK, Rappoport, Z.; Apeloig, Y. (Eds.), and (b) Allen, F.H., Kennard, O., Watson, D.G., Brummer, L., Orpen, A.G. & Taylor, R. 1987 J. Chem. Soc., Perkin Trans. II. 1.
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29
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33845935729
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For 1,3-disilabicyclo[1.1.1]pentanes 1Si-4Si and 8Si-11Si with the X bridge composed of first-row elements, the correlation between strain energy and Si-X-Si angle deformation is r 2 = 0.9066 at MP2/LANL2DZp level and r 2 = 0.9535 at B3LYP/LANL2DZp level
-
For 1,3-disilabicyclo[1.1.1]pentanes 1Si-4Si and 8Si-11Si with the X bridge composed of first-row elements, the correlation between strain energy and Si-X-Si angle deformation is r 2 = 0.9066 at MP2/LANL2DZp level and r 2 = 0.9535 at B3LYP/LANL2DZp level.
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0004219202
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In Ziegler, Chap. 7, p. 224, Washington, DC, American Chemical Society, (ACS Adv. Chem. Ser. 224), J. M. & Fearon, F.W. G. (Eds)
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33845960931
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3.54 (C)
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3.54 (C).
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33
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33845938201
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Ge-C = 1.945, Ge-N = 1.85, Ge-O = 1.76, Ge-Ge = 2.45, Ge-S = 2.23, Ge-P = 2.36 Å as reported in (a) Tin and, Lead Compounds, S. Patai (ed), Wiley, Chichester, UK, 1995 Chap. 2, p. 101. and (b) Kennard, O. 1990 CRC Handbook of Chemistry and Physics, 71 st, D.R. Lide (ed.), CRC Press, Boca Raton, Section. 9-1
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Ge-C = 1.945, Ge-N = 1.85, Ge-O = 1.76, Ge-Ge = 2.45, Ge-S = 2.23, Ge-P = 2.36 Å as reported in (a) Mackay, K.M. The Chemistry of Organic Germanium, Tin and, Lead Compounds, S. Patai (ed), Wiley, Chichester, UK, 1995 Chap. 2, p. 101. and (b) Kennard, O. 1990 CRC Handbook of Chemistry and Physics, 71 st, D.R. Lide (ed.), CRC Press, Boca Raton, Section. 9-1.
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