Tuning the intersubband absorption in strained AlAsSb/InGaAs quantum wells towards the telecommunications wavelength range

Journal of Applied Physics

Volumn 100, Issue 11, 2006, Pages

  Cristea, P ^a   Fedoryshyn, Y ^a   Holzman, J F ^a   Robin, F ^a   Jackel H ^a   Muller E ^a   Faist, J ^b  

^a ETH ZURICH   (Switzerland)

^b UNIVERSITY OF NEUCHÂTEL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TELECOMMUNICATION SYSTEMS; TRANSMISSION ELECTRON MICROSCOPY; TUNING;

ABSORPTION WAVELENGTH; INTERSUBBAND ABSORPTION; STRAIN COMPENSATION; TELECOMMUNICATIONS WAVELENGTH;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33845765296     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2400794     Document Type: Article

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