Microstructure and electrical properties of cosubstituted BiFeO3 thin films prepared by a chemical solution deposition

Ferroelectrics

Volumn 345, Issue , 2006, Pages 77-82

  Kim, J K ^a   Kim, S S ^a   Park, M H ^a   Choi, E J ^a   Kim, J W ^a   Guo, R ^b   Bhalla, A S ^b  

^a Changwon National University   (South Korea)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

BiFeO3; Chemical solution deposition; Ferroelectric hysteresis loop; Leakage current density

Indexed keywords

BISMUTH COMPOUNDS; DEPOSITION; ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; FERROELECTRICITY; HYSTERESIS; LEAKAGE CURRENTS; MICROSTRUCTURE; POLARIZATION; REMANENCE;

CHEMICAL SOLUTION DEPOSITION; COERCIVE FIELDS; FERROELECTRIC HYSTERESIS LOOP; IONIC RADII;

THIN FILMS;

EID: 33845630823     PISSN: 00150193     EISSN: 15635112     Source Type: Conference Proceeding    
DOI: 10.1080/00150190601021238     Document Type: Conference Paper

References (18)

1. Y.-H. Lee, J. -M. Wu, Y.-L. Chueh, and L.-J. chou, Appl. Phys. Lett. 87, 172901 (2005).
2. D. Lee, M. G. Kim, S. Ryu, and H. M. Jang, Appl. Phys. Lett. 86, 222903 (2005).
3. W. Orellier, M. P. Singh, and P. Murugavel, J. Phys.: Condens. Matter. 17, R803 (2005).
4. M. Fiebig, J. Phys. D: Appl. Phys. 38, R123 (2005).
5. V. R. Palkar, J. John, and R. Pinto, Appl. Phys. Lett. 80, 1628 (2002).
6. Y. W. Li, J. L. Sun, J. Chen, X. J. Meng, and J. H. Chu, Appl. Phys. Lett. 87, 182902 (2005).
7. S. Iakovlev, C.-H. Solterbeck, M. Kuhnke, and M. Es-Souni, J. Appl. Phys. 97, 094901 (2005).
8. J. Wang, J.B. Neaton, H. Zheng, V. Nagarajan, S. B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, N. A. Spaldin, K. M. Rabe, M. Wuttig, and R. Ramesh, Science, 299, 1719 (2003).
9. S. Y. Yang, F. Zavliche, L. Mohaddes-Ardabili, V. Vaithyanathan, D. G. Schlom, H. J. Lee, Y. H. Chu, M. P. Cruz, Q. Zhan, T. Zhao, and R. Ramesh, Appl. Phys. Lett. 87, 102903 (2005).
10. S. K. Singh, Y. K. Kim, H. Funakubo, and H. Ishiwara, Appl. Phys. Lett. 88, 162904 (2005).
11. F. Gao, C. Cai, Y. Wang, S. Dong, X. Y. Qui, G. L. Yuan, Z. G. Liu, and J.-M. Liu, J. Appl. Phys. 99, 094105 (2006).
12. S. K. Singh, H. Ishiwara, and K. Maruyama, Appl. Phys. Lett. 88, 262908 (2006).
13. J. K. Kim, S. S. Kim, W.-J. Kim, A. S. Bhalla, and R. Guo, Appl. Phys. Lett. 88, 132901 (2006).
14. Y. Wu and G. Cao, J. Mater. Sci. Lett. 19, 267 (2000).
15. M. Grossmann, O. Lohse, D. Bolten, U. Boettger, T. Schneller, and R. Waser, J. Appl. Phys. 92, 2680 (2002).
16. C. J. Lu, X. L. Liu, X. Q. Chen, C. J. Nie, G. L. Rhun, S. Senz, and D. Hesse, Appl. Phys. Lett. 88, 162905 (2006).
17. S. K. Singh, Y. K. Kim, H. Funakubo, and H. Ishiwara, Appl. Phys. Lett. 88, 162904 (2006).
18. H. Uchida, R. Ueno, H. Funakubo, and S. Koda, J. Appl. Phys. 100, 014106 (2006).