-
1
-
-
0000474836
-
Performance of high-efficiency AMOLED displays
-
Jan.
-
M. Hack, J. J. Brown, J. K. Mahon, R. C. Kwong, and R. Hewitt, "Performance of high-efficiency AMOLED displays," J. Soc. Jnf. Display, vol. 9, pp. 191-195, Jan. 2001.
-
(2001)
J. Soc. Jnf. Display
, vol.9
, pp. 191-195
-
-
Hack, M.1
Brown, J.J.2
Mahon, J.K.3
Kwong, R.C.4
Hewitt, R.5
-
2
-
-
29344441251
-
Driving schemes for a-Si and LTPS AMOLED displays
-
Dec.
-
A. Nathan, G. R. Chaji, and S. J. Ashtiani, "Driving schemes for a-Si and LTPS AMOLED displays," J. Display Technol., vol. 1, pp. 267-277, Dec. 2005.
-
(2005)
J. Display Technol.
, vol.1
, pp. 267-277
-
-
Nathan, A.1
Chaji, G.R.2
Ashtiani, S.J.3
-
3
-
-
18144377086
-
Driving scheme for the stable operation of the 2-TFT a-Si AMOLED pixel
-
Apr.
-
G. R. Chaji, P. Servati, and A. Nathan, "Driving scheme for the stable operation of the 2-TFT a-Si AMOLED pixel," Electron. Lett., vol. 8, pp. 499-500, Apr. 2005.
-
(2005)
Electron. Lett.
, vol.8
, pp. 499-500
-
-
Chaji, G.R.1
Servati, P.2
Nathan, A.3
-
4
-
-
0036565075
-
Modeling of the static and dynamic behavior of hydrogenated amorphous silicon thin-film transistors
-
May
-
P. Servati and A. Nathan, "Modeling of the static and dynamic behavior of hydrogenated amorphous silicon thin-film transistors," J. Vac. Sci. Tech., vol. 20, pp. 1038-1042, May 2002.
-
(2002)
J. Vac. Sci. Tech.
, vol.20
, pp. 1038-1042
-
-
Servati, P.1
Nathan, A.2
-
5
-
-
36549092941
-
Time and temperature dependence of instability mechanisms in amorphous silicon thin-film transistors
-
Jan.
-
M. J. Powell, C. Berkel, and J. R. Hughes, "Time and temperature dependence of instability mechanisms in amorphous silicon thin-film transistors," Appl. Phys. Lett., vol. 54, pp. 1323-1325, Jan. 1989.
-
(1989)
Appl. Phys. Lett.
, vol.54
, pp. 1323-1325
-
-
Powell, M.J.1
Berkel, C.2
Hughes, J.R.3
-
6
-
-
0033583208
-
Degradation mechanism of small molecule-based organic light-emitting devices
-
Mar.
-
H. Aziz, Z. D. Popovic, N. X. Hu, A. M. Hor, and G. Xu, "Degradation mechanism of small molecule-based organic light-emitting devices," Science, vol. 283, pp. 1900-1902, Mar. 1999.
-
(1999)
Science
, vol.283
, pp. 1900-1902
-
-
Aziz, H.1
Popovic, Z.D.2
Hu, N.X.3
Hor, A.M.4
Xu, G.5
-
7
-
-
0021477881
-
Switch-induced error voltage on a switched capacitor
-
Aug.
-
B. J. Sheu and C. Hu, "Switch-induced error voltage on a switched capacitor," IEEE J. Solid-State Circuits, vol. SC-19, no. 4, pp. 519-525, Aug. 1984.
-
(1984)
IEEE J. Solid-state Circuits
, vol.SC-19
, Issue.4
, pp. 519-525
-
-
Sheu, B.J.1
Hu, C.2
-
8
-
-
0023545836
-
Charge injection in analog MOS switches
-
Dec.
-
G. Wegmann, E. A. Vitoz, and F. Rahali, "Charge injection in analog MOS switches," IEEE J. Solid-State Circuits, vol. SC-22, no. 6, pp. 1091-1097, Dec. 1987.
-
(1987)
IEEE J. Solid-state Circuits
, vol.SC-22
, Issue.6
, pp. 1091-1097
-
-
Wegmann, G.1
Vitoz, E.A.2
Rahali, F.3
-
9
-
-
24144462850
-
Threshold voltage instability of amorphous silicon thin-film transistors under constant current stress
-
Jul.
-
S. M. Jahinuzzaman, A. Sultana, K. Sakariya, P. Servati, and A. Nathan, "Threshold voltage instability of amorphous silicon thin-film transistors under constant current stress," Appl. Phys. Lett., vol. 87, pp. 023502-1-023502-3, Jul. 2005.
-
(2005)
Appl. Phys. Lett.
, vol.87
, pp. 235021-235023
-
-
Jahinuzzaman, S.M.1
Sultana, A.2
Sakariya, K.3
Servati, P.4
Nathan, A.5
-
10
-
-
21544456295
-
Bias-stress-induced creation and removal of dangling-bond states in amorphous silicon thin-film transistors
-
Jan.
-
M. J. Powell, S. C. Deane, and W. I. Milne, "Bias-stress-induced creation and removal of dangling-bond states in amorphous silicon thin-film transistors," Appl. Phys. Lett., vol. 60, pp. 207-209, Jan. 1992.
-
(1992)
Appl. Phys. Lett.
, vol.60
, pp. 207-209
-
-
Powell, M.J.1
Deane, S.C.2
Milne, W.I.3
-
11
-
-
29244474402
-
A new a-Si:H TFT pixel circuit compensating the threshold voltage shift of a-Si:H TFT and OLED for active matrix OLED
-
Dec.
-
J. H. Lee, J. H. Kim, and M. K. Han, "A new a-Si:H TFT pixel circuit compensating the threshold voltage shift of a-Si:H TFT and OLED for active matrix OLED," IEEE Electron Device Lett., vol. 26, pp. 897-899, Dec. 2005.
-
(2005)
IEEE Electron Device Lett.
, vol.26
, pp. 897-899
-
-
Lee, J.H.1
Kim, J.H.2
Han, M.K.3
-
12
-
-
32244449292
-
A 14.1 inch full color AMOLED display with top emission structure and a-Si TFT backplane
-
Boston, MA, May 4
-
J. H. Jung et al., "A 14.1 inch full color AMOLED display with top emission structure and a-Si TFT backplane," in Tech. Dig. SID Symp., Boston, MA, May 4, 2005, pp. 1538-1541.
-
(2005)
Tech. Dig. SID Symp.
, pp. 1538-1541
-
-
Jung, J.H.1
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