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Volumn 133, Issue 1, 2007, Pages 9-12

Ultra high performance planar InGaAs PIN photodiodes for high speed optical fiber communication

Author keywords

3 dB bandwidth; InGaAs; PIN photodiode; Responsivity

Indexed keywords

BANDWIDTH; ELECTRIC BREAKDOWN; OPTICAL COMMUNICATION; OPTICAL FIBERS; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 33845591617     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2006.04.023     Document Type: Article
Times cited : (20)

References (9)
  • 1
    • 0022767035 scopus 로고    scopus 로고
    • R.S. Tucker, A.J. Tayler, C.A. Burrus, G. Eisentein, J.M. Wiesenfeld, IEE Electron. Lett. 22 (17) (1986) 917-918.
  • 2
    • 0028766205 scopus 로고    scopus 로고
    • W.-J. Ho, M.-C. Wu, Y.M. Lin, InGaAs pin photodiodes grown by liquid-phase epitaxy using erbium gettering, IEE Electron. Lett. 30 (1) (1994) 83-84.
  • 6
    • 77956604836 scopus 로고    scopus 로고
    • Zuon-Min Chuang, Ting-Arn Dai, Wen-Jeng Ho, Jian-Guang Chen, Hung-Hui Shih, Wei Lin, Yuan-Kuan Tu, Low capacitance, front-illuminated planar InGaAs PIN photodiode on semi-insulating InP substrate, EDMS (1994) 94 11-7-25-11-7-28.
  • 7
    • 0029634674 scopus 로고    scopus 로고
    • J. Justice, B. Corbett, S. Walsh. L. Considine, W.M. Kelly, Dark currents in pin photodetectors fabricated by preprocessing and postprocessing techniques of epitaxial liftoff, IEE Electron. Lett. 31 (16) (1995) 1382-1383.
  • 8
    • 0003612420 scopus 로고    scopus 로고
    • Cambridge, United Kingdom (Chapter 11)
    • Rosencher, and Vinter. Optoelectronics (2002), Cambridge, United Kingdom (Chapter 11)
    • (2002) Optoelectronics
    • Rosencher1    Vinter2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.