Dark currents in pin photodetectors fabricated by preprocessing and postprocessing techniques of epitaxial liftoff

Electronics Letters

Volumn 31, Issue 16, 1995, Pages 1382-1383

  Justice, J ^a   Corbett, B ^a   Walsh, S ^a   Considine, L ^a   Kelly, W M ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

Epitaxial lift off; pin photodiodes

Indexed keywords

ARRAYS; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; LITHOGRAPHY; OHMIC CONTACTS; PHOTODETECTORS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON;

CONDUCTIVE CARBON GLUE; DARK CURRENTS; EPITAXIAL LIFTOFF TECHNIQUE; OPTICAL LITHOGRAPHY; POSTPROCESSING TECHNIQUES; PREPROCESSING TECHNIQUE; STANDARD METAL LIFTOFF PROCEDURE;

PHOTODIODES;

EID: 0029634674     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19950915     Document Type: Article

References (6)

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