InGaAs pin photodiodes grown by liquid-phase epitaxy using erbium gettering

Electronics Letters

Volumn 30, Issue 1, 1994, Pages 83-84

  Ho, W J ^a   Wu, M C ^a   Lin, Y M ^a   Tu, Y K ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b RESEARCH INSTITUTE OF HIGHWAY MINISTRY OF TRANSPORT   (China)

Author keywords

Epitaxial growth; Optoelectronics; Photodiodes

Indexed keywords

ANTIREFLECTION COATINGS; CAPACITANCE; CARRIER CONCENTRATION; ENERGY GAP; ERBIUM; LIQUID PHASE EPITAXY; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SOLUTIONS; SPECTRUM ANALYSIS;

DONOR; ERBIUM GETTERING; GROWTH SOLUTIONS; PHOTORESPONSIVITY; PIN PHOTODIODES; ZERO BIAS;

PHOTODIODES;

EID: 0028766205     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19940024     Document Type: Article

References (6)

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