Numerical examination of photon recycling as an explanation of observed carrier lifetime in direct bandgap materials

VLSI Design

Volumn 8, Issue 1-4, 1998, Pages 153-157

  Parks Jr , Joseph W ^a,c,d   Brennan, Kevin F ^a,e,f,g,h   Smith, Arlynn W ^a,b,i,j  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b ITT Night Vision   (United States)

^c University of Tennessee ^*

^d UNIVERSITY OF TENNESSEE   (United States)

^e MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^f UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^g GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^h NATIONAL SCIENCE FOUNDATION   (United States)

ⁱ ALFRED UNIVERSITY   (United States)

^j GEORGIA TECH RESEARCH INSTITUTE   (United States)

more..

Author keywords

Macroscopic simulation; Photon recycling; Reabsorption; Self excitation

Indexed keywords

CARRIER CONCENTRATION; LIGHT ABSORPTION; PHOTONS; RAY TRACING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS;

CARRIER LIFETIME; PHOTON RECYCLING;

PHOTODIODES;

EID: 0032309863     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/1998/16476     Document Type: Article

References (7)

1. Durbin, S. M. and Gray, J. L., "Numerical Modeling of Photon Recycling in Solar Cells", IEEE Trans. Elec. Dev., 41(2), pp. 239-245, Feb. 1994.
2. Asbeck, P., "Self-Absorption Effects on the Radiative Lifetime in GaAs-GaAlAs Double Heterostructures", J. Appl. Phys., 48(2), pp. 820-822, Feb. 1977.
3. Sieg, R. M. and Ringel, S. A., "Reabsorption, Band-gap Narrowing, and the Reconciliation of Photoluminescence Spectra with Electrical Measurements for Epitaxial n-InP", J. Appl. Phys., 80(1), pp. 448-458, July. 1996.
4. Parks, J. W., Smith, K. F., Brennan, K. F. and Tarof, L. E., "Theoretical Study of Device Sensitivity and Gain Saturation of Separate Absorption, Grading, Charge and Multiplication InP/InGaAs Avalanche Photodiode", IEEE Trans. Elec. Dev., 43(12), pp. 2113-2121, Dec. 1996.
5. Gallant, M. and Zemel, A., "Long Minority Hole Diffusion Length and Evidence for Bulk Radiative Recombination Lifetime in InP/InGaAs Double Heterostructures", Appl. Phys. Lett., 52(20), pp. 1686-1688, May 1988.
6. st IEEE Photovoltaic Spec. Conference.
7. Pankove, J. I. (1971). Optical Processes in Semiconductors, Prentice-Hall, Englewood Cliffs, N. J.