Characterization and modeling of flicker noise in junction field-effect transistor with source and drain trench isolation

Microelectronics Reliability

Volumn 47, Issue 1, 2007, Pages 46-50

  Fu, Y ^a   Wong, H ^b   Liou, J J ^a  

^a University of Central Florida   (United States)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; FLICKERING; JUNCTION GATE FIELD EFFECT TRANSISTORS; MATHEMATICAL MODELS; NATURAL FREQUENCIES; PASSIVATION;

FLICKER NOISE; FREQUENCY INDEX; NOISE ANALOG APPLICATIONS; SHALLOW TRENCH ISOLATION (STI);

SPURIOUS SIGNAL NOISE;

EID: 33845438685     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.01.009     Document Type: Article

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