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Volumn 2006, Issue , 2006, Pages

High-performance InP-based optical modulators

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ERROR DETECTION; MICROWAVE CIRCUITS; SEMICONDUCTOR MATERIALS; SPEED CONTROL; WAVEGUIDES;

EID: 33845358610     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ofc.2006.215454     Document Type: Conference Paper
Times cited : (8)

References (9)
  • 2
    • 0033318544 scopus 로고    scopus 로고
    • 320 Gbit/s (8×40 Gbit/s) WDM transmission over 367 km with 120 km repeater spacing using carrier-suppressed return-to-zero fomrat
    • Y. Miyamoto, et al., "320 Gbit/s (8×40 Gbit/s) WDM transmission over 367 km with 120 km repeater spacing using carrier-suppressed return-to-zero fomrat," Electronics Lett., 35, 2041-2042 (1999).
    • (1999) Electronics Lett. , vol.35 , pp. 2041-2042
    • Miyamoto, Y.1
  • 3
    • 17344383948 scopus 로고    scopus 로고
    • 2.5 Tb/s (64×42.7 Gbit/s) transmission over 40×100 km NZDSF using RZ-DPSK format and all-Raman-amplified spans
    • Post-deadline paper, FC2
    • A. H. Gnauck, et al,"2.5 Tb/s (64×42.7 Gbit/s) transmission over 40×100 km NZDSF using RZ-DPSK format and all-Raman-amplified spans," in Technical Digest of Optical Fiber Communication Conference (OFC2002), Post-deadline paper, FC2 (2002).
    • (2002) Technical Digest of Optical Fiber Communication Conference (OFC2002)
    • Gnauck, A.H.1
  • 5
    • 12344291660 scopus 로고    scopus 로고
    • A 40 Gbit/s InGaAlAs-InAlAs MQW n-i-n Mach-Zehnder modulator with a drive voltage of 2.3 v
    • K. Tsuzuki, et al, "A 40 Gbit/s InGaAlAs-InAlAs MQW n-i-n Mach-Zehnder modulator with a drive voltage of 2.3 V," IEEE Photon. Technol. Lett., 17, 46-48 (2005).
    • (2005) IEEE Photon. Technol. Lett. , vol.17 , pp. 46-48
    • Tsuzuki, K.1
  • 6
    • 0005230288 scopus 로고    scopus 로고
    • Model of trap filling and avalanche breakdown in semi-insulating Fe:InP
    • P. J. Corvini and J. E. Bowers, "Model of trap filling and avalanche breakdown in semi-insulating Fe:InP," J. Appl. Phys., 82, 259-269 (1997)
    • (1997) J. Appl. Phys. , vol.82 , pp. 259-269
    • Corvini, P.J.1    Bowers, J.E.2
  • 8
    • 4544374903 scopus 로고    scopus 로고
    • 40 Gbit/s electroabsorption modulators with 1.1 v driving voltage
    • H. Fukano, et al, "40 Gbit/s electroabsorption modulators with 1.1 V driving voltage," Electron. Lett., 40, 1144-1166 (2004).
    • (2004) Electron. Lett. , vol.40 , pp. 1144-1166
    • Fukano, H.1
  • 9
    • 15244352736 scopus 로고    scopus 로고
    • Very low driving-voltage InGaAlAs/InAlAs electroabsorption modulators operating at 40 Gbit/s
    • H. Fukano, et al., "Very low driving-voltage InGaAlAs/InAlAs electroabsorption modulators operating at 40 Gbit/s," Electron. Lett., 41, 211-212 (2005).
    • (2005) Electron. Lett. , vol.41 , pp. 211-212
    • Fukano, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.