40 Gb/s InP-based Mach-Zehnder modulator with a driving voltage of 3 v pp

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2004, Pages 581-584

  Akiyama, S ^a   Hirose, S ^a   Itoh, H ^a   Takeuchi, T ^a   Watanabe, T ^a   Sekiguchi, S ^a   Kuramata, A ^a   Yamamoto, T ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC FIELDS; ELECTRIC LOSSES; ELECTRODES; HETEROJUNCTIONS; OPTICAL WAVEGUIDES; REFRACTIVE INDEX; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING;

INP-BASED MACH-ZEHNDER MODULATOR; MODULATION BANDWIDTH; MULTIMODE INTERFERENCE (MMI) COUPLERS; TRAVELING-WAVE ELECTRODES;

MODULATORS;

EID: 12844275672     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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7. pp", OFC'04, Los Angeles, California, 2004, post-deadline paper PDP14
8. R. G. Walker, "High-Speed III-V Semiconductor Intensity Modulators", IEEE J. Quantum. Electron, 27, pp. 654-667 (1991)
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