Very low driving-voltage InGaAlAs/lnAlAs electroabsorption modulators operating at 40 Gbit/s

Electronics Letters

Volumn 41, Issue 4, 2005, Pages 211-212

  Fukano, H ^a   Yamanaka, T ^a   Tamura, M ^a   Kondo, Y ^a   Saitoh, T ^a,b  

^a NTT CORPORATION   (Japan)

^b KANSAI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CAPACITANCE; ELECTRIC POTENTIAL; FABRICATION; INTEGRATED CIRCUITS; LOGIC CIRCUITS; POLYIMIDES; SEMICONDUCTING INDIUM COMPOUNDS; TELECOMMUNICATION TRAFFIC;

DATA TRAFFIC; ELECTROABSORPTION MODULATORS (EAM); MONOLITHIC INTEGRABILITY; OPTICAL COMPONENTS;

MODULATORS;

EID: 15244352736     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20057992     Document Type: Article

References (4)

1. T SiGe technology', IEEE J. Solid-State Circuits, 2002, 37, pp. 1106-1114
2. Yamanaka, T., Wakita, K., and Yokoyama, K.: 'Field-induced broadening of optical absorption in InP-based quantum wells with strong and weak quantum confinement', Appl. Phys. Lett., 1994, 65, pp. 1540-1542
3. Akage, Y., et al.: 'Polarization-independent InGaAlAs/InAlAs electroabsorption modulators with an optimized strained-MQW'. Proc. CLEO Pacific Rim'99, 1999, WH3, pp. 191-192
4. Tamura, M., et al.: 'High-speed electroabsorption modulators using ruthenium-doped SI-InP: impact of interdiffusion-free burying technology on E/O modulation characteristics'. Proc. 15th IPRM'03, 2003, Paper FA1.1