Influence of nucleation parameters in the spatial distribution of the Ge nanocrystals formed by LPCVD

Materials Science in Semiconductor Processing

Volumn 9, Issue 4-5 SPEC. ISS., 2006, Pages 828-831

  Marins, E S ^a,b   Mestanza, S N M ^b   Doi, I ^a,b  

^a UNIVERSITY OF CAMPINAS   (Brazil)

^b Center for Semiconductor Components   (Brazil)

Author keywords

Atomic force microscopy; Germanium nanocrystals; Nanostructures; Semiconductor nanocrystals; Transmission electron microscopy

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; NANOSTRUCTURED MATERIALS; NUCLEATION; TRANSMISSION ELECTRON MICROSCOPY;

GERMANIUM NANOCRYSTALS; LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); NUCLEATION PARAMETERS; SEMICONDUCTOR NANOCRYSTALS;

SEMICONDUCTING GERMANIUM;

EID: 33845326155     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.08.019     Document Type: Article

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