Sublimation growth of 3C-SiC on 6H-SiC seeds

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages

  Freudenberg, A ^a   Wollweber, J ^a   Nitschke, R ^a   Alex, V ^a   Doerschel, J ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

A1. Characterisation; A1. X ray topography; A2. Growth from vapour; B2. Semiconducting silicon compounds

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION; CRYSTAL ORIENTATION; NUCLEATION; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SILICON WAFERS; SINGLE CRYSTALS; SUBLIMATION; THERMODYNAMICS;

GROWTH FROM VAPORS; PHYSICAL VAPOR TRANSPORT (PVT); TRAVELLING HEATER METHODS (THM); X-RAY TOPOGRAPHY;

SILICON CARBIDE;

EID: 15944362710     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.11.115     Document Type: Conference Paper

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