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Volumn 1, Issue , 2006, Pages 68-71
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Fabrication and transistor demonstration on Si-based nanomembranes
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Author keywords
Elastic strain relaxation; FET; Nanomembrane; SGOI; SOI
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Indexed keywords
FIELD EFFECT TRANSISTORS;
HETEROJUNCTIONS;
SILICON ON INSULATOR TECHNOLOGY;
SINGLE CRYSTALS;
SUBSTRATES;
ELASTIC STRAIN RELAXATION;
NANOMEMBRANES;
SILICON-GERMANIUM-ON-INSULATOR (SGOI) SUBSTRATES;
NANOSTRUCTURED MATERIALS;
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EID: 33845198938
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (1)
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References (8)
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