Effect of thermal annealing on the sensitivity of Si-based MOS diodes to reducing gases

Semiconductors

Volumn 40, Issue 12, 2006, Pages 1436-1441

  Balyuba, V I ^a   Gritsyk, V Yu ^a   Davydova, T A ^a   Kalygina, V M ^a   Nazarov, S S ^a   Panin, A V ^b   Khludkova, L S ^a  

^a Kuznetsov Physicotechnical Institute   (Russian Federation)

^b INSTITUTE OF STRENGTH PHYSICS AND MATERIALS SCIENCE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33751568134     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782606120128     Document Type: Article

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