Thick film Au-gate field-effect devices sensitive to NO 2

Sensors and Actuators, B: Chemical

Volumn 81, Issue 2-3, 2002, Pages 296-300

  Filippini, D ^a,d   Fraigi, L ^b   Aragon R ^c   Weimar, U ^a  

^a UNIVERSITY OF TÜBINGEN   (Germany)

^b Laboratorio de Sensores   (Spain)

^c UNIVERSIDAD DE BUENOS AIRES   (Argentina)

^d LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Chemical gas sensors; Field effect; Nitrogen dioxide; Thick films

Indexed keywords

VOLTAGE SHIFT;

COMPOSITION EFFECTS; GATES (TRANSISTOR); GOLD; MOS CAPACITORS; NITROGEN OXIDES; PHYSICAL VAPOR DEPOSITION; SENSITIVITY ANALYSIS; THICK FILM DEVICES;

CHEMICAL SENSORS;

EID: 0037021779     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(01)00969-8     Document Type: Article

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