Nanofabrication of top-gated carbon nanotube-based transistors: Probing electron-electron interactions in one-dimensional systems

Journal of Materials Research

Volumn 21, Issue 11, 2006, Pages 2916-2921

  Sulpizio, J A ^a   Bandic Z Z ^b   Goldhaber Gordon, D ^a  

^a STANFORD UNIVERSITY   (United States)

^b HITACHI AMERICA LTD   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; ELECTRON BEAM LITHOGRAPHY; ELECTRON TUNNELING; FERMI LIQUIDS; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR DEVICE MANUFACTURE;

ATOMIC LAYER DEPOSITION; NANOWIRES; SINGLE-WALLED CARBON NANOTUBE; SOURCE-DRAIN SPACINGS;

TRANSISTORS;

EID: 33751433405     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2006.0361     Document Type: Article

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