Nanoscale capacitors based on metal-insulator-carbon nanotube-metal (MICNM) structures

Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference

Volumn 2005, Issue , 2005, Pages 545-547

  Jang, J E ^a   Cha, S N ^a   Choi, Y ^a   Kang, D J ^a,b   Hasko, D G ^c   Amaratunga, G A J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b Sungkyunkwan University   (South Korea)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DENSITY (SPECIFIC GRAVITY); DYNAMIC RANDOM ACCESS STORAGE; ELECTRON BEAM LITHOGRAPHY; METAL INSULATOR BOUNDARIES; NANOSTRUCTURED MATERIALS; SILICON;

INTEGRATION DENSITY; METAL INSULATOR CARBON NANOTUBE METALS (MICNM); NANOSCALE CAPACITORS; SILICON PILLAR STRUCTURES;

CARBON NANOTUBES;

EID: 33751420742     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2005.1546705     Document Type: Conference Paper

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