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Volumn 102, Issue 6, 2006, Pages 5303-5313
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Optimization of the electron-beam-lithography parameters for the moth-eye effects of an antireflection matrix structure
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Author keywords
Atomic force microscopy (AFM); Lithography; Nanotechnology
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
NANOTECHNOLOGY;
PHOTORESISTS;
SILICON WAFERS;
ANTIREFLECTION MATRIX STRUCTURES;
TAGUCHI QUALITY METHOD;
ELECTRON BEAM LITHOGRAPHY;
MATRIX;
NEURAL NETWORK;
OPTICAL PROPERTY;
PROCESS CONTROL;
SILICON;
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EID: 33751350546
PISSN: 00218995
EISSN: 10974628
Source Type: Journal
DOI: 10.1002/app.24827 Document Type: Article |
Times cited : (10)
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References (23)
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