Gettering effects by aluminum upon the dark and illuminated I-V characteristics of N+-P-P+ silicon solar cells

Solar Energy Materials and Solar Cells

Volumn 62, Issue 4, 2000, Pages 369-378

  Santana, Guillermo ^a   Morales Acevedo, Arturo ^a   Martel, Andrés ^b   Hernández, Luis ^b  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b UNIVERSITY OF HAVANA   (Cuba)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; HIGH TEMPERATURE OPERATIONS; IRON; THERMAL EFFECTS;

IMPURITY GETTERING; SHOCKLEY-READ-HALL TRAP LEVELS;

SILICON SOLAR CELLS;

EID: 0033731718     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(99)00158-0     Document Type: Article

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