Analytic expression and approach for low subthreshold-swing tunnel transistors

Device Research Conference - Conference Digest, DRC

Volumn 2005, Issue , 2005, Pages 161-162

  Qin, Zhang ^a   Wei, Zhao ^a   Seabaugh, Alan ^a  

^a University of Notre Dame   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERBAND TUNNEL JUNCTION; MATERIAL PROPERTIES; SUBTHRESHOLD SWING; TUNNEL TRANSISTORS;

CARBON NANOTUBES; COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC FIELDS; ELECTRON TUNNELING; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY;

FIELD EFFECT TRANSISTORS;

EID: 33751315784     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2005.1553102     Document Type: Conference Paper

References (8)

1. J. Appenzeller et al., Phys. Rev. Lett., vol. 93, pp. 196805, 2004.
2. K. K. Bhuwalka et al., Jap. J. Appl. Phys.,vol. 43, pp.4073, 2004.
3. S. M. Sze, Physics of Semiconductor Devices, 1st ed. New York: Wiley, 1969, p. 111.
4. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981, p. 446.
5. Y. Taur et al., 1998 IEDM Tech. Dig., pp. 789.
6. J. M. C. Stork and R. D. Isaac, IEEE Trans. Electron Dev., vol. 30, pp. 1527, 1983.
7. R. B. Fair and H. W. Wivell, IEEE Trans. Electron Dev., vol. 23, pp. 512, 1976.
8. K. K. Young, IEEE Trans. Electron Dev., vol. 36, pp. 399, 1989.