High-speed germanium-on-insulator photodetectors

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 2005, Issue , 2005, Pages 304-305

  Dehlinger, G ^a,b   Schaub, J D ^a,c   Koester, S J ^a   Ouyang, Q C ^a   Chu, J O ^a   Grill, A ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b INFINEON TECHNOLOGIES AUSTRIA AG   (Austria)

^c IBM AUSTIN RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM-ON-INSULATOR; INTERCONNECT APPLICATIONS;

BANDWIDTH; GERMANIUM; OPTICAL INTERCONNECTS; SILICON;

PHOTODETECTORS;

EID: 33751309897     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/LEOS.2005.1548000     Document Type: Conference Paper

References (6)

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2. S. B. Samavedam, M. T. Currie, T. A. Langdo, and E. A. Fitzgerald, "High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed buffers," Appl. Phys. Lett., vol. 73, pp. 2125-2127, 1998.
3. x, grown by UHV-CVD," Device Research Conference, pp.60-1, 1998.
4. G. Dehlinger, et al., "High-speed lateral pin Ge-on-Silicon photodetectors," presented at the 1 st Int. SiGe Technology and Device Meeting, Nagoya, Japan, 2003.
5. L. Colace, M. Gianlorenzo, and A. Gaetano, "Ge-on-Si approaches to the detection of near-infrared light," IEEE J. Quantum Electron., vol. 35, pp. 1843-1852, Dec. 1999.
6. H.-C. Luan et al., "High-quality Ge epilayers on Si with low threading-dislocation densities," Appl. Phys. Lett., vol. 75, no. 19, pp. 2909-2911, Nov. 1999.