Positron depth profiling in ion-implanted zirconia stabilized with trivalent cations

Radiation Physics and Chemistry

Volumn 76, Issue 2, 2007, Pages 333-336

  Grynszpan, R I ^a,b,c   Saude S ^a,b,c   Mazerolles, L ^c   Brauer, G ^d   Anwand, W ^d  

^a DYNFLUID LABORATORY   (France)

^b DGA   (France)

^c ISCSA   (France)

^d INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Ion implantation; Positron annihilation; Radiation effects; Zirconia

Indexed keywords

ELECTRON TRAPS; ION IMPLANTATION; POSITIVE IONS; POSITRONS; RADIATION EFFECTS; SOLID SOLUTIONS; STABILIZERS (AGENTS);

OXYGEN VACANCY; POSITRON ANNIHILATION; POSITRON DEPTH PROFILING; TRIVALENT CATIONS;

ZIRCONIA;

CATION; HELIUM; OXYGEN; ZIRCONIUM OXIDE;

ARTICLE; CHEMICAL STRUCTURE; CONCENTRATION (PARAMETERS); CRYSTAL STRUCTURE; POSITRON;

EID: 33751280142     PISSN: 0969806X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.radphyschem.2006.03.061     Document Type: Article

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