Chemical analysis of nanometric dielectric layers using spatially resolved VEELS

Ultramicroscopy

Volumn 104, Issue 3-4, 2005, Pages 233-243

  Pokrant, S ^a   Cheynet, M ^b   Jullian, S ^a   Pantel, R ^c  

^a NXP SEMICONDUCTORS   (Netherlands)

^b CNRS   (France)

^c STMICROELECTRONICS   (France)

Author keywords

Chemical analysis; HfO2; Valence Electron Energy Loss Spectroscopy (VEELS)

Indexed keywords

CHEMICAL ANALYSIS; ELECTRON ENERGY LEVELS; MONOLAYERS; NANOTECHNOLOGY; SEMICONDUCTOR DEVICES; TRANSMISSION ELECTRON MICROSCOPY;

DELOCALISATION; NANOMETRIC DIELECTRIC LAYERS; SPATIAL RESOLUTION; VALENCE ELECTRON ENERGY LOSS SPECTROSCOPY (VEELS); VALENCE ELECTRONS;

DIELECTRIC MATERIALS;

NANOPARTICLE;

ANALYTIC METHOD; ARTICLE; CHEMICAL ANALYSIS; DEVICE; DIELECTRIC CONSTANT; ELECTRON DIFFRACTION; ELECTRON ENERGY LOSS SPECTROSCOPY; SEMICONDUCTOR; STRUCTURE ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 22144495819     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ultramic.2005.05.001     Document Type: Article

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