Lift-out techniques coupled with advanced TEM characterization methods for electrical failure analysis

Microelectronics Reliability

Volumn 42, Issue 9-11, 2002, Pages 1747-1752

  Bicais Lepinay N ^a   Andre, F ^a   Pantel, R ^a   Jullian, S ^b   Margain, A ^a   Kwakman, L F T Z ^b  

^a STMICROELECTRONICS   (France)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ANALYSIS; DEFECTS; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; ENERGY DISSIPATION; FAILURE (MECHANICAL); HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; ION BEAMS; MILLING (MACHINING); SEMICONDUCTOR DEVICE MANUFACTURE;

CHEMICAL COMPOSITIONS; DEFECT CHARACTERISATION; ELECTRON TRANSPARENCY; ENERGY DISPERSIVE X-RAY; PHYSICAL CHARACTERIZATION; SEMICONDUCTOR INDUSTRY; TEM (TRANSMISSION ELECTRON MICROSCOPY); TEM CHARACTERIZATION;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 0038255004     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(02)00224-x     Document Type: Conference Paper

References (2)

1. D.M.Longo et al: ultra microscopy 80 (1999) 69
2. F.Hofer et al: ultra microscopy 67 (1997) 83