Atomic layer deposited WNxCy films growth on SiC surfaces

Microelectronic Engineering

Volumn 83, Issue 11-12, 2006, Pages 2068-2071

  Martin Hoyas, A ^a   Whelan, C M ^a   Schuhmacher, J ^a   Maex, K ^a   Celis, J P ^b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; OXIDATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; SURFACE TREATMENT; TUNGSTEN COMPOUNDS;

AMMONIA PRECURSORS; ATOMIC LAYER DEPOSITION (ALD); TUNGSTEN HEXAFLUORIDE; TUNGSTEN NITRIDE CARBIDE;

FILM GROWTH;

EID: 33751206553     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.09.010     Document Type: Article

References (10)

1. Shacham-Diamand Y., Dedhia A., Hoffstetter D., and Oldham W.G. J. Electrochem. Soc. 140 (1993) 2427
2. Uekubo M., Oku T., Nii K., Murakami M., Yamaguchi S., Nakano T., and Ohta T. Thin Solid films 286 (1996) 170
3. Torres J. Appl. Surf. Sci. 91 (1995) 112
4. Murarka S.P., Gutmann R.J., Kaloyeros A.E., and Lanford W.A. Thin Solid Films 236 (1993) 257
5. Istratov A.A., and Weber E.R. J. Electrochem. Soc 149 (2002) G21
6. Puurunen R.L. J. Appl. Phys. 97 (2005) 121301
7. Önneby C., and Pantano C.G. J. Vac. Sci. Technol. A 15 (1997) 1597
8. A. Martin Hoyas, Y. Travaly, J. Schuhmacher, T. Sajavaara, C.M. Whelan, O. Richard, S. Giangrandi, B. Brijs, W. Vandervorst, K. Maex, J.P. Celis, A.M. Jonas, A. Vantomme. J. Appl. Phys., in press.
9. A. Martin Hoyas, C.M. Whelan, J. Schuhmacher, J.P. Celis, K. Maex, Electrochem. Sol. St. Lett., in press.
10. Travaly Y., Schuhmacher J., Martin Hoyas A., Van Hove M., and Maex K. J. Appl. Phys. 97 (2005) 084316