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Volumn 253, Issue 4, 2006, Pages 1978-1982

Thionin adsorption on silicon (1 0 0): Structural analysis

Author keywords

Chemisorption; Ellipsometry; Raman spectroscopy; Scanning force microscopy; Surface electronic phenomena; Thionin

Indexed keywords

ADSORPTION; ATOMIC FORCE MICROSCOPY; CHEMISORPTION; MOLECULAR VIBRATIONS; MONOLAYERS; PHOTODYNAMIC THERAPY; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON;

EID: 33751205315     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.03.051     Document Type: Article
Times cited : (5)

References (17)
  • 12
    • 33751219688 scopus 로고    scopus 로고
    • Although our approach considers periodic boundary conditions, each system is simulated in a cubic box large enough to mimic a cluster.
  • 17
    • 0003493474 scopus 로고    scopus 로고
    • For a more complete discussion of the theoretical modelling of the electronic and vibrational properties os such systems refer to, World Scientific, London
    • For a more complete discussion of the theoretical modelling of the electronic and vibrational properties os such systems refer to. Srivastava G.P. Theoretical Modelling of Semiconductor Surfaces-Microscopic Studies of Electrons and Phonons (1999), World Scientific, London
    • (1999) Theoretical Modelling of Semiconductor Surfaces-Microscopic Studies of Electrons and Phonons
    • Srivastava, G.P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.