Ferroelectric properties of MBi4Ti4O15 (M=Sr, Pb, Ca) thin films

Integrated Ferroelectrics

Volumn 65, Issue , 2004, Pages 57-67

  Xianyu, Wen Xu ^a,b   Won, Tab Young ^a   Lee, Wan In ^a  

^a Inha University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

CaBi4Ti4O15; Fatigue; Ferroelectric; Hysteresis loop; Layered perovskite; PbBi4Ti 4O15; SrBi4Ti4O15; Thin film

Indexed keywords

BISMUTH COMPOUNDS; CRYSTAL STRUCTURE; DEPOSITION; GRAIN SIZE AND SHAPE; HYSTERESIS; PEROVSKITE; POLARIZATION;

HYSTERESIS LOOP; LAYERED PEROVSKITE; OFF-C-AXIS ORIENTATION; REMANENT POLARIZATION;

FERROELECTRIC THIN FILMS;

EID: 33751199374     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580490892782     Document Type: Article

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